To220f Osg55r190FF Vds-600V ID-60A N-Channel Power Mosfet

Product Description

Product Description General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Applications
PC power
LED lighting
Telecom power
Server power
EV Charger
Solar/UPS
Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	600	V
ID, pulse	60	A
RDS(ON) , max @ VGS=10V	190	mΩ
Qg	17.7	nC

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	550	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	20	A
Continuous drain current1) , TC=100 °C		12.5
Pulsed drain current2) , TC=25 °C	ID, pulse	60	A
Continuous diode forward current1) , TC=25 °C	IS	20	A
Diode pulsed current2) , TC=25 °C	IS, pulse	60	A
Power dissipation3) , TC=25 °C	PD	32	W
Single pulsed avalanche energy5)	EAS	200	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	3.9	°C/W
Thermal resistance, junction-ambient4)	RθJA	62.5	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	550			V	VGS=0 V, ID=250 uA
		600				VGS=0 V, ID=250 uA, Tj=150 °C
Gate threshold voltage	VGS(th)	2.7		3.7	V	VDS=VGS , ID=250 uA
Drain-source on- state resistance	RDS(ON)		0.15	0.19	Ω	VGS=10 V, ID=10 A
			0.37			VGS=10 V, ID=10 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			1	μA	VDS=550 V, VGS=0 V

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		17.7		nC	VGS=10 V, VDS=400 V, ID=10 A
Gate-source charge	Qgs		4		nC
Gate-drain charge	Qgd		7.2		nC
Gate plateau voltage	Vplateau		5.7		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=20 A, VGS=0 V
Reverse recovery time	trr		237.7		ns	VR=400 V, IS=10 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		2.6		μC
Peak reverse recovery current	Irrm		21.1		A

Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=100 V, VGS=10 V, L=10 mH, starting Tj=25 °C.
Ordering Information

Package Type	Units/ Tube	Tubes / Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
TO220F-C	50	20	1000	6	6000
TO220F-J	50	20	1000	5	5000

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
OSG55R190FF	TO220F	yes	yes	yes

Supply Chain
Green Product Declaration

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